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Intrinsic and extrinsic semiconductors, p-n junction diode, rectification, transistor action and amplification, logic gates with truth tables, and the operational amplifier with its inverting and non-inverting uses.
A pure semiconductor such as silicon or germanium is called intrinsic. Each atom has four valence electrons and forms four covalent bonds. At absolute zero there are no free charges. At room temperature heat breaks a few bonds. Each broken bond frees an electron and leaves a vacancy called a hole, which acts as a positive charge carrier. In an intrinsic semiconductor the number of electrons equals the number of holes.
Doping means adding a small amount of impurity to a pure semiconductor to raise its conductivity. The result is an extrinsic semiconductor.
Types of extrinsic semiconductor:
A p-n junction is formed when p-type and n-type material are joined in one crystal. Electrons diffuse from the n side to the p side and holes diffuse the other way. Near the junction they combine and leave behind fixed ions. This region is the depletion layer, which has no free carriers. The fixed ions create a barrier potential, about 0.7 V for silicon and 0.3 V for germanium, which stops further diffusion.
Biasing of a p-n junction diode:
A diode conducts well in one direction only, so it can be used as a rectifier to change AC into DC. In half wave rectification one diode passes only one half of each cycle. In full wave rectification two diodes with a centre tapped transformer, or four diodes in a bridge, pass both halves, and the output frequency is twice the input frequency. A capacitor filter then smooths the output. A Zener diode is made for use in reverse breakdown and keeps a steady voltage, so it is used as a voltage regulator. LEDs give light when forward biased and photodiodes respond to light in reverse bias.
A transistor is a three layer device with an emitter, a base and a collector. In an n-p-n transistor a thin p base lies between two n regions. The emitter is heavily doped, the base is thin and lightly doped, and the collector is large. In normal operation the emitter base junction is forward biased and the collector base junction is reverse biased. The emitter current is IE = IB + IC.
The current gain in common emitter mode is β = IC/IB, and it is usually from 20 to several hundred. A small change in base current causes a large change in collector current, so the transistor can amplify. A transistor also works as a switch: with no base current it is off (cut off), and with a large base current it is fully on (saturation).
Logic gates and their outputs:
An operational amplifier (op-amp) is a high gain integrated circuit with an inverting input (−), a non-inverting input (+) and one output. An ideal op-amp has infinite open loop gain, infinite input resistance and zero output resistance. With negative feedback the two inputs are at nearly the same potential. For the inverting amplifier the gain is −Rf/Rin, and for the non-inverting amplifier the gain is 1 + Rf/Rin. The output of the inverting amplifier is out of phase with the input by 180°.
Study tip: Learn all six truth tables and practise drawing them without notes. For the diode and transistor, draw the circuit and mark the biasing polarity clearly. In op-amp numericals, state which type of amplifier it is before choosing the gain formula.
Say the meaning first, then open the card to check.
A pure semiconductor in which electrons and holes are equal in number.
Adding a small amount of impurity to change the conductivity.
A vacancy for an electron in a covalent bond that acts as a positive charge carrier.
The region near a p-n junction with no free charge carriers.
The potential difference across the depletion layer that stops diffusion.
A circuit that changes alternating current into direct current.
The ratio IC/IB of a transistor in common emitter mode.
A gate (NAND or NOR) from which all other gates can be made.
Returning part of the output to the input of an amplifier.
| Name | Formula | What it means |
|---|---|---|
| Transistor currents | IE = IB + IC | Emitter current is the sum of base and collector currents. |
| Current gain | β = IC / IB | Common emitter mode. |
| Inverting op-amp gain | A = −Rf / Rin | Rf is the feedback resistor. |
| Non-inverting op-amp gain | A = 1 + Rf / Rin | Output is in phase with input. |
| Full wave output frequency | fout = 2 fin | Frequency doubles after full wave rectification. |
These are the kind of questions asked for 2, 3 and 5 marks. Try each one before opening the answer.
An n-type semiconductor is doped with a pentavalent impurity such as phosphorus, so electrons are the majority carriers. A p-type semiconductor is doped with a trivalent impurity such as boron, so holes are the majority carriers. Both are electrically neutral.
It is the thin region on both sides of a p-n junction from which free electrons and holes have diffused away and combined. It contains only fixed charged ions and is almost an insulator.
In forward bias the applied voltage opposes the barrier potential, so the depletion layer narrows and majority carriers cross the junction as a large current. In reverse bias the applied voltage adds to the barrier, so the depletion layer widens and only a tiny leakage current of minority carriers flows.
Inputs A, B and output: 0,0 gives 1; 0,1 gives 1; 1,0 gives 1; 1,1 gives 0. The output is 0 only when both inputs are 1.
In a common emitter circuit the emitter base junction is forward biased and the collector base junction is reverse biased. The signal is applied between base and emitter. A small change in the base current causes a much larger change in the collector current, because IC = βIB. The collector current flows through a load resistor RL, so the output voltage change across RL is much larger than the input voltage change. In this way a weak signal is amplified, and the extra power comes from the collector battery.
An ideal op-amp has infinite open loop voltage gain, infinite input resistance so that it draws no current from the source, zero output resistance, infinite bandwidth and zero output when both inputs are equal.
Answer: β = 50, IE = 2.04 mA
Answer: Gain = −10, output = −2 V
Answer: Gain = 10
Answer: 100 Hz